SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ZXMS6005DGQTA is a self-protected low-side IntelliFET MOSFET manufactured by Diodes Incorporated. It features an N-channel silicon construction in a SOT-223-3 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 60 V and a continuous drain current of 2 A. The device exhibits a maximum on-resistance of 200 mΩ at a gate voltage of 5 V, with a threshold voltage of 700 mV. It supports power dissipation up to 3 W and operates within a temperature range of -40°C to +125°C. The component is AEC-Q101 qualified for automotive applications.
Verify the specific ordering suffix to ensure correct packaging configuration, as variations exist between tape-and-reel formats. Confirm that the requested part number matches the exact thermal and electrical specifications required for the target application. Cross-reference the datasheet revision date to ensure compliance with current manufacturing standards. Ensure compatibility with automated pick-and-place equipment for the SOT-223-3 package type during assembly processes.
Select this component when robust protection features are required alongside standard MOSFET switching capabilities. The logic-level input allows direct interfacing with common digital control signals without additional driver circuitry. Consider the thermal performance of the SOT-223-3 package for heat dissipation requirements. Evaluate the need for integrated fault protection to simplify system design and enhance reliability compared to discrete solutions.
This part belongs to the ZXMS6005 series of IntelliFET devices from Diodes Incorporated. These components are designed to replace standard MOSFETs in applications demanding higher durability. The series offers integrated protection circuits to handle fault conditions automatically. The DGQ variant specifically denotes the SOT-223-3 package configuration suitable for surface mount technology.
ZXMS6005SGQTA is a verified substitute within the same product family offering identical functional characteristics.