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The ZXMS6005DN8Q-13 is a single-channel N-channel Low Side IntelliFET manufactured by Diodes Incorporated. It features a SOIC-8 surface-mount package and utilizes silicon technology. The device has a drain-source breakdown voltage of 60 V, a continuous drain current of 2 A, and an on-resistance of 250 mOhms. The gate-source threshold voltage is 1.5 V, with a power dissipation rating of 1.65 W. It operates within a temperature range of -40 C to +150 C and holds AEC-Q101 qualification.
Verify the specific suffix 'Q-13' against official Diodes Incorporated documentation to confirm AEC-Q101 automotive qualification status and RoHS compliance details. Ensure the SOIC-8 package dimensions match your PCB footprint requirements. Cross-reference the datasheet for thermal resistance values relevant to your specific board layout and ambient operating conditions before finalizing procurement.
Select this component when a robust, automotive-grade N-channel power switch is required with integrated fault protection. The 250 mOhms on-resistance offers a balance between conduction losses and cost for 2 A loads. Consider the SOIC-8 package for standard surface-mount assembly processes. Verify that the 60 V voltage rating provides sufficient headroom for your specific application's supply voltage and transient spikes.
This part belongs to the ZXMS600x series of Low Side IntelliFETs from Diodes Incorporated. These devices are designed specifically for automotive applications requiring high reliability and compact packaging. The series typically integrates protection features such as over-temperature and short-circuit protection into a small form factor, distinguishing them from standard discrete MOSFETs.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Diodes Incorporated official documentation or authorized distributor catalogs for direct pin-to-pin replacements or functional equivalents within the same product family.