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The ZXMS6005SGQTA is a 60V N-channel self-protected enhancement mode IntelliFET MOSFET in an SOT-223 package. It features a continuous drain current of 2A, on-resistance of 200mΩ at 5V gate drive, and power dissipation of 1.6W. The device includes over-temperature, over-current, and over-voltage protection with auto-restart functionality. It operates within a temperature range of -40°C to +150°C junction temperature.
Verify the specific suffix 'GQTA' against official Diodes Incorporated documentation to confirm the exact tape and reel quantity and RoHS compliance status. Ensure that the ordering information matches the required packaging format and environmental certifications before finalizing procurement orders.
Select this component when standard MOSFETs lack sufficient ruggedness for the application. It is suitable for circuits requiring integrated protection against thermal and electrical faults without external circuitry. Verify that the 2A current rating and 60V voltage withstand are adequate for the specific load requirements.
This part belongs to the ZXMS6005 series of self-protected low-side IntelliFET MOSFETs from Diodes Incorporated. These devices are designed to replace standard discrete MOSFETs in applications where reliability and protection are critical, offering a compact solution with built-in safety features.
Direct substitutes include other variants within the ZXMS6005 family such as ZXMS6005DGQ-13 or ZXMS6005N8-13, provided the package type and pinout compatibility are verified. Cross-reference datasheets to ensure equivalent protection thresholds and thermal characteristics.