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The ZXMS6006DGQ-13 is a single N-channel low-side IntelliFET MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and supports a continuous drain current of 2A with a maximum on-resistance of 100 mΩ. The device operates within a temperature range of -40°C to +150°C, dissipating up to 1.3W of power. It utilizes an SOT-223-3 surface-mount package and includes AEC-Q101 automotive qualification.
Verify the specific suffix DGQ-13 against official Diodes Incorporated documentation to confirm the SOT-223 package and tape-and-reel quantity specifications. Ensure that the AEC-Q101 qualification status aligns with project requirements. Cross-reference the datasheet revision date to confirm component availability and manufacturing status prior to procurement.
Select this component for applications requiring integrated fault protection and logic-level drive compatibility. The SOT-223 package offers high power dissipation relative to its footprint. Consider the 100 mΩ on-resistance and 2A current rating when designing thermal management solutions for continuous operation scenarios.
This part belongs to the IntelliFET series of self-protected power switches designed for robust performance in demanding environments. It combines standard MOSFET switching capabilities with built-in diagnostic and protection features, simplifying system design by reducing external component count.
Public confirmed substitute part numbers are not available in the provided source material. Verify pinout and electrical parameters carefully if considering alternative manufacturers or variants within the same family.