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The ZXMS6006DN8Q-13 is a dual N-channel low-side IntelliFET power switch manufactured by Diodes Incorporated. It features a 60 V drain-source voltage rating and supports a continuous drain current of 2.8 A. The device incorporates an on-resistance of 75 mOhms typical value. It operates within a temperature range of -40°C to +125°C and delivers a power dissipation capacity of 210 mJ. The component is housed in an SOIC-8 surface-mount package and holds AEC-Q101 automotive qualification.
Verify the specific suffix DN8Q against official Diodes Incorporated documentation to confirm package type and tape-and-reel specifications. Ensure that the AEC-Q101 qualification status aligns with your project's automotive grade requirements. Cross-reference the SOIC-8 footprint dimensions with your PCB design guidelines to guarantee mechanical compatibility before finalizing procurement orders.
Select this component when dual-channel low-side switching with integrated protection is required in automotive contexts. Consider the 60 V rating and 2.8 A current capability as primary constraints. Evaluate the thermal performance within the specified operating temperature range. Compare against single-channel alternatives if only one output is needed, or higher-current variants if load demands exceed the rated limits.
This part belongs to the IntelliFET family from Diodes Incorporated, designed specifically for automotive applications. It combines MOSFET technology with intelligent protection features. The series targets high-reliability power management tasks where fault tolerance is critical. It serves as a modern replacement for discrete MOSFETs plus external protection circuitry in complex automotive electronics.
ZXMS6006DT8TA is a confirmed substitute offering similar IntelliFET capabilities in an SM8 package.