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The ZXMS6006SGQ-13 is a single N-channel IntelliFET MOSFET manufactured by Diodes Incorporated. It features a 60 V drain-source voltage rating and supports a continuous drain current of 2.8 A. The device exhibits a maximum on-resistance of 100 mOhms and a gate threshold voltage of 1.5 V. Packaged in an SOT-223-3 surface-mount case, it operates within a temperature range of -40°C to +150°C with a power dissipation capacity of 1.6 W. Key switching parameters include a typical turn-on delay of 8.6 µs, fall time of 15 µs, and turn-off delay of 34 µs.
Verify component authenticity through authorized Diodes Incorporated channels or certified distributors. Confirm package marking matches the specified SOT-223 form factor. Ensure storage conditions comply with moisture sensitivity levels prior to reflow soldering. Cross-reference datasheet revisions to validate electrical characteristics against specific design requirements.
Select this component when a robust single-channel N-channel switch is required with integrated protection features. The 60 V rating and 2.8 A current capacity suit moderate power loads. The SOT-223 package offers thermal performance advantages over smaller footprints. Consider the 1.5 V threshold voltage for compatibility with common logic families.
This part belongs to the IntelliFET series from Diodes Incorporated, designed for power management applications requiring built-in fault protection. It serves as a discrete alternative to complex IC drivers, offering simplified implementation for basic switching tasks while maintaining high reliability standards in automotive and industrial environments.
Direct substitutes may include other 60V N-channel IntelliFETs in SOT-223 packages from Diodes, such as variants within the ZXMS600x family. Verify pinout compatibility and thermal resistance values before substitution.