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The ZXMS6006SGQTA is a single N-channel enhancement mode MOSFET from the IntelliFET series by Diodes Incorporated. It features a 60V drain-source breakdown voltage and supports a continuous drain current of 2.8A. The device exhibits a maximum on-resistance of 100mΩ at room temperature, with a gate threshold voltage of 1.5V. Packaged in an SOT-223-3 surface-mount format, it operates within a temperature range of -40°C to +150°C and dissipates up to 1.6W of power.
Verify the specific suffix 'Q' against the manufacturer's latest documentation to confirm RoHS compliance status and lead time requirements. Ensure the ordering quantity aligns with the tape-and-reel packaging specifications provided in the official datasheet. Cross-reference the part number with authorized distributors to confirm current availability and authenticity before finalizing procurement plans.
Select this component when a single N-channel switch with 60V rating and 2.8A current capacity is required. The SOT-223 package suits space-constrained designs needing surface-mount integration. Consider the 100mΩ on-resistance for thermal management calculations. Verify that the 1.5V gate threshold voltage matches the control logic levels of the driving circuitry for reliable switching operation.
This part belongs to the ZXMS6006 family of IntelliFET devices manufactured by Diodes Incorporated. These components are categorized under power management ICs, specifically power distribution switches and load drivers. The family includes variants with different packaging options such as SOT-223 and SM-8, designed for various low-side switching applications requiring integrated protection features.
Direct substitutes include other ZXMS6006 variants like ZXMS6006SGTA or ZXMS6006DGQTA, depending on the required packaging and reel quantity. Verify pinout compatibility and electrical parameters before substitution. Consult the manufacturer's obsolescence notices to ensure long-term supply stability for design-in decisions.