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The ZXMS6008DN8-13 is a dual N-channel self-protected low-side IntelliFET MOSFET from Diodes Incorporated. It features a 60V drain-source voltage rating and a continuous drain current of 1.1A. The device has a maximum on-resistance of 500 milliohms and a gate-source threshold voltage of 1.5V. It operates within a temperature range of -40°C to +125°C with a power dissipation of 1.56W. Packaged in an 8-SOIC case, it includes integrated protection against overcurrent, overtemperature, and reverse polarity.
Verify the specific suffix -13 indicates tape and reel packaging configuration. Confirm AEC-Q101 qualification status if automotive application is required. Ensure the SO-8 package dimensions match PCB footprint requirements. Check RoHS compliance documentation for environmental regulations. Validate that the self-protected IntelliFET architecture meets system safety standards.
Select this component when standard MOSFETs lack sufficient ruggedness for harsh environments. Consider the 60V rating and 1.1A current limit for appropriate load matching. Evaluate the 500 milliohm on-resistance for thermal management needs. Verify compatibility with 3.3V or 5V logic levels for direct microcontroller interfacing without additional gate drivers.
This part belongs to the ZXMS600x series of IntelliFET devices from Diodes Incorporated. These components are designed as robust alternatives to discrete MOSFETs in demanding applications. The series integrates protection circuitry directly onto the silicon die to enhance system reliability.
ZXMS6008DN8 is the base part number variant. ZXMS6004DN8-13 offers similar protection but different electrical characteristics.