SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ZXMS6008N8-13 is a single N-channel Low Side IntelliFET manufactured by Diodes Incorporated. It features a SOIC-8 surface-mount package and utilizes silicon technology. The device has a drain-source breakdown voltage of 60 V and supports a continuous drain current of 1.1 A. Its on-resistance is 700 mOhms, with a gate-source threshold voltage of 1.5 V. Operating temperatures range from -40 C to +150 C, and power dissipation is rated at 1.28 W.
Verify the component authenticity against Diodes Incorporated official documentation before integration. Confirm that the specific ordering suffix matches the required package and tape-and-reel specifications. Ensure environmental compliance data aligns with project requirements. Cross-reference the manufacturer part number with distributor catalogs to confirm availability and lead times. Validate thermal performance parameters against the application's heat dissipation capabilities.
Select this component for low-side switching applications requiring integrated protection. The logic-level input simplifies interface with standard microcontrollers. Consider the 60 V rating and 1.1 A current limit for load matching. The SOIC-8 package suits space-constrained designs. Evaluate the auto-restart feature suitability for transient fault conditions in the target system.
This part belongs to the IntelliFET family of intelligent power switches. It combines a MOSFET with diagnostic and protection circuitry. The series targets automotive and industrial loads. It differs from discrete MOSFETs by including built-in safeguards. The designation indicates specific electrical characteristics within the product line.
Public confirmed substitute part numbers are not available in the provided documentation.