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The ZXTD2M832TA is a dual PNP transistor array manufactured by Diodes Incorporated, housed in a compact 3-MLP/DFN (2x2) surface-mount package. This component features a collector-emitter breakdown voltage of 20 V and supports a continuous collector current of 3.5 A. It exhibits a maximum DC current gain (hFE) of 150 at 2 A with a 2 V collector-emitter voltage. The device operates within a temperature range of -55°C to +150°C junction temperature and handles a power dissipation of 3 W. Key electrical characteristics include a transition frequency of 180 MHz and a saturation voltage of 300 mV at 350 mA base current and 3.5 A collector current.
Verify the specific suffix TA indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status as historical data may vary. Check for obsolescence notices or lifecycle changes from Diodes Incorporated before finalizing procurement plans. Ensure the supplier provides valid traceability documentation for this discontinued or end-of-life part number.
Select this component where a dual PNP switch is required in a minimal board area. Compare the 3.5 A current rating against load requirements. Consider the 20 V voltage limit for circuit compatibility. Evaluate the 3-MLP thermal performance against system heat dissipation capabilities.
This part belongs to the ZXTD series of dual transistors designed for low saturation switching. It serves as an alternative to discrete dual PNP configurations, reducing component count. The MLP package offers height savings compared to traditional SOT packages.
ZXTP718MATA is listed as a direct replacement by Diodes Incorporated. NSS20500UW3T2G from onsemi is also cited as an available substitute. Verify pinout and electrical parameter compatibility before substitution.