SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ZXTD3M832TA is a dual PNP bipolar transistor array manufactured by Diodes Incorporated. It features a maximum collector-emitter breakdown voltage of 40V and a continuous collector current rating of 3A. The device is housed in an 8-MLP (3x2) package, also identified as 8-VDFN with an exposed pad. Key electrical specifications include a maximum saturation voltage of 370mV at specified base and collector currents. This component is designed for compact circuit applications requiring dual PNP switching capabilities within a small footprint.
Verify the obsolete status of this specific part number before procurement planning. Confirm availability of direct substitutes such as the ZXTD720MCTA if inventory is unavailable. Ensure that the replacement component matches the required voltage, current, and package specifications to maintain circuit integrity. Check RoHS compliance requirements for your specific manufacturing standards.
Select this component when a dual PNP configuration is required in a minimal footprint. Consider the 40V breakdown voltage and 3A current limits to ensure adequate headroom for the application. The 8-MLP package requires appropriate thermal management due to the exposed pad design. Evaluate alternative active parts if long-term supply stability is a critical constraint.
This component belongs to the Zetex series of bipolar transistor arrays from Diodes Incorporated. It is categorized under discrete semiconductor devices specifically designed for dual transistor applications. The product line focuses on providing integrated solutions for space-constrained designs in industrial and consumer markets.
The ZXTD720MCTA is listed as a direct substitute. Verify pin compatibility and electrical parameters before substitution.