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The ZXTN08400BNS-7 is a dual NPN medium power transistor in a PowerDI3333-8 package. It features a common-collector configuration with two independent transistors sharing the collector terminal. The device supports a continuous collector current of 0.5A and offers a collector-emitter breakdown voltage (BVCEO) of 400V, with a maximum collector-base voltage of 450V. Total power dissipation reaches 1.83W on an FR-4 substrate with thermal bias. Key electrical characteristics include a low saturation voltage of less than 175mV at 500mA and a transition frequency of 40MHz.
Verify the specific ordering suffix '-7' to confirm the standard reel size of 2000 units per 7-inch tape. Ensure compliance requirements match the manufacturer's definitions for halogen and antimony-free 'Green' devices. Confirm that the PowerDI3333-8 package dimensions align with the target PCB footprint layout.
Select this component when a high-voltage dual NPN configuration is required in a compact surface-mount form factor. The common-collector design allows for flexible circuit topologies, including Darlington configurations. Evaluate the thermal resistance parameters against the expected ambient temperature and PCB copper area to ensure adequate heat dissipation during operation.
This part belongs to Diodes Incorporated's ZXTN series of high-voltage bipolar junction transistors. It utilizes the PowerDI3333-8 package, which provides enhanced thermal performance compared to traditional plastic packages while maintaining a small footprint suitable for dense board layouts.
Direct substitutes must match the 400V BVCEO rating, 0.5A IC limit, and PowerDI3333-8 package. Verify pinout compatibility, specifically the common collector arrangement, before implementation.
Yes, the datasheet specifies that the dual NPN transistors can be configured as an NPN Darlington pair.
The absolute maximum collector-base voltage (VCBO) is 450V.
Yes, the tie-bars are internally connected to the common collector and do not need to be externally connected.