ZXTP56060FDBQ-7

Overview

The ZXTP56060FDBQ is a dual PNP bipolar junction transistor (BJT) designed for automotive applications. It features a collector-emitter voltage (VCEO) of -60V and a continuous collector current (IC) of -2A. The device provides an equivalent on-resistance (RCE(sat)) of 250mΩ at IE = -1A and IB = -50mA, with a maximum power dissipation (PD) reaching up to 2.47W under specific thermal conditions. Operating temperatures range from -55°C to +150°C. It utilizes a U-DFN2020-6 package with sidewall tin plating.

Feature Summary

• AEC-Q101 qualified for automotive reliability
• Sidewall tin plating for wettable flanks in AOI
• Low-profile 0.6mm-high package
• Totally lead-free and fully RoHS compliant

Applications

• Matrix LED lighting
• Power management

Procurement Notes

Verify the part number suffix matches the required reel size and packing quantity. Confirm that the ordering information aligns with the specific packaging requirements for your assembly line. Ensure compliance with the manufacturer's standard terms and conditions before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring dual PNP switching with high current handling capabilities in a compact form factor. Consider the thermal resistance values and derating curves to ensure adequate heat dissipation within the specified operating temperature range for your application environment.

Part Context

This device belongs to Diodes Incorporated's portfolio of automotive-grade discrete semiconductors. It is manufactured in IATF16949 certified facilities and is PPAP capable, ensuring consistency and quality control suitable for stringent automotive supply chain requirements.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications carefully if considering alternative components from other manufacturers.