06N06L

$0.05

Description：MOSFET N-CH 60V 5.5A SOT-23-3L
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR)

SKU:1a435af1fcbd Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 5.5A SOT-23-3L
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：5.5A
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：42mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：765 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：960mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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06N06L

Overview

The Goford Semiconductor 06N06L is an N-channel enhancement mode power MOSFET utilizing advanced trench technology. It features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 5.5A at 25°C case temperature. The device offers a maximum on-resistance (RDS(on)) of 45mΩ at VGS=10V and 50mΩ at VGS=4.5V. Key dynamic parameters include a gate charge (Qg) of 16nC, input capacitance (Ciss) of 765pF, and reverse transfer capacitance (Crss) of 40pF. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Advanced trench technology provides low on-resistance and reduced gate charge for efficient switching.
100% avalanche tested to ensure robustness against inductive load switching events.
Logic-level compatible with low threshold voltage enabling effective drive from standard logic sources.

Applications

Power switch circuits
DC/DC converters

Procurement Notes

Verify the specific datasheet revision (e.g., A1514.16-V1.2) matches your design requirements. Confirm RoHS compliance status as indicated in the documentation. Ensure thermal management aligns with the specified RthJA of 62.5 ºC/W for your PCB layout. Check package marking 'L' for SOT-23-3 identification during assembly.

Selection Notes

Select this component for applications requiring a 60V N-channel MOSFET in a compact SOT-23-3 package. Consider the 45mΩ RDS(on) at 10V drive for low conduction losses. Evaluate the 16nC gate charge against your driver capability for switching speed requirements. Verify that the 5.5A continuous current rating suits your thermal dissipation constraints.

Part Context

This part belongs to the Goford Semiconductor power MOSFET portfolio, specifically designed using trench technology for improved performance over planar devices. It targets general-purpose switching applications where size and efficiency are critical. The SOT-23-3 package allows for high-density surface mount placement on printed circuit boards.