SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Analog Power 2N7002 is an N-channel enhancement mode MOSFET housed in a SOT-23 surface-mount package. It features a maximum drain-source voltage of 60 V and a gate-source voltage rating of ±20 V. The device provides a continuous drain current of 0.6 A at 25°C, reducing to 0.5 A at 70°C, with a pulsed drain current capability of 15 A. On-state resistance is specified as 3 Ω at VGS = 10 V and 4 Ω at VGS = 4.5 V. Thermal performance includes a junction-to-ambient thermal resistance of 166 °C/W under steady-state conditions on a 1” x 1” FR4 board.
Verify the specific manufacturer designation, as the 2N7002 identifier is widely used by multiple semiconductor producers including ON Semiconductor, Diodes Incorporated, and Vishay. Confirm that the Analog Power datasheet matches the required electrical parameters and physical dimensions for your design. Ensure compliance with RoHS standards and check for any specific handling requirements related to moisture sensitivity levels before integration.
Select this component when a compact N-channel switch is required for low-voltage logic-level control. The 60 V rating supports standard 5 V and 12 V systems. Consider the 3 Ω on-resistance at 10 V drive for minimal power loss in small signal applications. Evaluate the 166 °C/W thermal resistance against your PCB copper area to ensure safe operating temperatures under continuous load conditions.
This part belongs to the general-purpose N-channel MOSFET category designed for small-signal switching. It serves as a voltage-controlled switch for loads requiring up to 0.6 A continuous current. The SOT-23 package allows for high-density mounting on printed circuit boards, making it suitable for space-constrained consumer electronics and industrial control modules.
Cross-reference with other manufacturers' 2N7002 variants such as those from ON Semiconductor or Diodes Incorporated. Verify pinout compatibility and ensure equivalent or superior electrical ratings for VDS, ID, and RDS(on) are met. Check for identical package dimensions to maintain mechanical fit without redesigning the footprint.
The maximum pulsed drain current (IDM) is 15 A.
The on-resistance is 3 Ω at a gate-source voltage of 10 V and increases to 4 Ω at a gate-source voltage of 4.5 V.