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Product Detailed Parameters
- Description：MOSFET N-CH 80V 200A TO-263
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4603 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AM200N08-03B is an N-channel enhancement mode power MOSFET manufactured by Analog Power Inc. It features a drain-source voltage rating of 80V and a continuous drain current capacity of 200A at case temperature. The device is designed for surface mount applications in the TO-263 package, offering a thermal dissipation capability of 300W under specified conditions. Key electrical characteristics include a gate-source threshold voltage minimum of 1V and a gate-body leakage current limit of ±100nA at ±20V gate bias with zero drain-source voltage.
Feature Summary
- N-channel enhancement mode construction for high-side or low-side switching applications
- Surface mount TO-263 packaging optimized for thermal management
- Low gate-source threshold voltage enabling efficient drive compatibility
Applications
- High current DC-DC converter stages
- Motor control output stages
- Power distribution units requiring robust switching
Procurement Notes
Verify the manufacturer part number AM200N08-03B against official Analog Power Inc. documentation to confirm specifications. Ensure the TO-263 package variant matches design requirements. Cross-reference datasheet parameters such as VDS, ID, and RDS(on) with system constraints before integration.
Selection Notes
Select this component when an 80V N-channel MOSFET with high current handling is required in a surface mount form factor. Consider the TO-263 package for thermal performance needs. Verify that the 200A current rating aligns with peak load demands and that the 1V threshold voltage suits the available gate drive signal levels.
Part Context
Analog Power Inc. specializes in power management semiconductors, including N-channel and P-channel MOSFETs. The company offers solutions with low on-resistance across various packages like DFN and SO. This specific model belongs to their single FET lineup designed for efficient power switching and regulation tasks.
Replacement Considerations
Consult official substitution guides for compatible N-channel 80V MOSFETs in TO-263 packages. Verify pinout compatibility and thermal characteristics before replacing the original component with alternatives from other manufacturers.
