AM200N08-1M8FP

$3.01

Description：MOSFET N-CH 80V 200A TO-247
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:a3a5bb44bd23 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 200A TO-247
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：99 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5783 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：500W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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AM200N08-1M8FP

Overview

The AM200N08-1M8FP is an N-Channel Silicon MOSFET manufactured by Analog Power Inc. It features a Drain-to-Source Voltage (Vdss) of 80 V and a continuous Drain Current (ID) of 200 A at case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 2.6 mΩ. It is housed in a TO-247-3 through-hole package and is rated for 500 W power dissipation at case temperature.

Feature Summary

N-Channel silicon MOSFET technology
Through-hole TO-247-3 packaging
High current handling capability

Applications

Power management systems
Industrial motor control
DC-DC converters

Procurement Notes

Verify the specific manufacturer documentation to confirm the exact electrical characteristics and thermal limits. Ensure the component meets all safety standards for your intended application, as it is not authorized for surgical implants or life-critical systems. Cross-reference the part number with official Analog Power Inc. catalogs to confirm availability and current status.

Selection Notes

Select this component when an 80 V rating and high current capacity are required. The TO-247-3 package facilitates efficient heat dissipation for high-power applications. Consider the low on-resistance for minimizing conduction losses in switching circuits. Verify that the thermal management design supports the specified power dissipation ratings under operating conditions.

Part Context

Analog Power Inc. specializes in power management semiconductors. This MOSFET belongs to their portfolio of N-Channel devices designed for robust performance. The company focuses on precise design for power applications, offering components across various packages including DFN and SO types.

Replacement Considerations

Check for direct substitutes within the same voltage and current class. Ensure pinout compatibility and thermal resistance values match the original design requirements before substitution.