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Product Detailed Parameters
- Description：MOSFET N-CH 100V 6.9A TO-252
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：6.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：530mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：367 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：50W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AM10P10-530D is a single P-channel MOSFET from Analog Power Inc. It features a maximum drain-source voltage (VDS) of -100 V and a gate-source voltage (VGS) rating of 20 V. The device has a typical on-resistance (RDS(on)) of 530 mΩ at VGS = -10 V, with a maximum limit of 720 mΩ. It supports a continuous drain current (ID) of 6 A. Key electrical parameters include a total gate charge (QG) of 5 nC and a power dissipation (PD) of 50 W. The component is housed in a TO-252 package.
Feature Summary
- Single P-channel MOSFET configuration
- Low gate charge for efficient switching
- High power dissipation capability
Applications
- Power management circuits
- DC-DC converter designs
- Motor control applications
Procurement Notes
Verify the specific datasheet version to confirm exact RDS(on) limits and thermal characteristics. Ensure the TO-252 package dimensions match your PCB footprint requirements. Cross-reference the manufacturer's official documentation for absolute maximum ratings to prevent operational exceedance.
Selection Notes
Select this component for applications requiring a -100 V P-channel switch with moderate current handling. The low gate charge facilitates faster switching speeds compared to higher QG alternatives. Consider the TO-252 package for its balance of thermal performance and surface-mount convenience.
Part Context
This part belongs to the Analog Power Inc. P-channel MOSFET lineup, designed for general-purpose power switching. It complements other devices in the series offering varying voltage and current ratings within the same package family for flexible design integration.
Replacement Considerations
Check for direct pin-compatible substitutes with identical -100 V and 6 A ratings. Verify that alternative components maintain similar RDS(on) and QG specifications to ensure circuit performance parity.
