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Product Detailed Parameters
- Description：MOSFET N-CH 100V 17A TO-252
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：115mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1622 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AM20N10-115D is an N-Channel MOSFET from Analog Power Inc. It features a 100V drain-source voltage rating and supports a continuous drain current of 17A at case temperature. The device utilizes advanced trench technology for performance optimization. It is housed in a surface-mount TO-252 package, suitable for power management applications requiring efficient switching capabilities.
Feature Summary
- Advanced trench technology implementation
- Surface mount TO-252 packaging
Applications
- Power supply circuits
- General power management systems
Procurement Notes
Verify the specific datasheet version to confirm electrical characteristics such as gate-source threshold voltage and on-resistance values. Ensure the TO-252 package dimensions match your PCB footprint requirements. Confirm that the thermal resistance parameters align with your heat dissipation design constraints before finalizing procurement.
Selection Notes
Select this component when a 100V N-Channel MOSFET with 17A current capability is required. The TO-252 package offers a balance between current handling and board space efficiency. Consider the trench technology benefits for switching applications compared to standard planar devices.
Part Context
Analog Power Inc. specializes in power management semiconductors, including N-Channel and P-Channel MOSFETs. The company provides application-specific solutions with low on-resistance options across various packages like DFN and SO. This part fits within their portfolio of power discrete components designed for efficient energy conversion.
Replacement Considerations
Check for direct substitutes with identical 100V/17A ratings and TO-252 footprints. Verify pin compatibility and thermal performance metrics. Ensure any replacement maintains the same trench technology advantages if switching speed or conduction losses are critical factors.
