ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 1.4A SOT-23
- Series：*
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2N7002E is an N-channel enhancement mode MOSFET designed for low-voltage switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 240mA at 25°C. The device exhibits a typical gate-source threshold voltage of 2.5V at 250µA and a maximum on-resistance of 3Ω at Vgs=10V. Power dissipation is rated at 350mW in the SOT-23 package, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Enhancement mode operation suitable for low-side switching
- Low on-resistance for efficient power handling
- Fast switching speed with low input capacitance
- Compact surface-mount packaging for high-density designs
Applications
- Load switching circuits
- Level shifting interfaces
- Motor controller driver stages
- Power management logic control
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific lot traceability before integration. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent package damage during soldering processes.
Selection Notes
Select this component when a compact N-channel switch is required for signals up to 60V. Evaluate thermal constraints carefully as power dissipation is limited to 350mW. Verify that the driving circuit can provide sufficient gate voltage to achieve the specified low on-resistance values under expected load conditions.
Part Context
This part belongs to the standard 2N7002 family of small-signal MOSFETs widely used in consumer electronics and industrial controls. It serves as a fundamental building block for digital logic interfacing and low-power analog switching tasks where space efficiency and cost-effectiveness are primary design drivers.
Replacement Considerations
Substitutes include DiodesZetex 2N7002E-7-F and Vishay 2N7002E-T1-E3. Verify pinout compatibility and ensure electrical parameters such as breakdown voltage and current ratings meet or exceed original specifications.
