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Product Detailed Parameters
- Description：MOSFET N-CH 60V 0.6A SOT-23
- Series：-
- Mfr：Analog Power Inc.
- Package：Strip
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 600mA, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：474 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Analog Power 2N7002-CT is an N-channel enhancement mode MOSFET housed in a SOT-23 surface-mount package. It features a maximum drain-source voltage of 60 V and a gate-source voltage rating of ±20 V. The device provides a continuous drain current of 0.6 A at 25°C, reducing to 0.5 A at 70°C, with a pulsed drain current capability of 15 A. On-state resistance is specified as 3 Ω at VGS = 10 V and 4 Ω at VGS = 4.5 V. Total gate charge is typically 4 nC, and the junction-to-ambient thermal resistance is 166 °C/W.
Feature Summary
- Low on-resistance trench technology for efficient conduction
- Fast switching speed suitable for high-frequency applications
- Low thermal impedance for effective heat dissipation
Applications
- White LED boost converters
- Automotive systems
- Industrial DC/DC conversion circuits
Procurement Notes
Verify the specific manufacturer designation for the 'Analog Power' brand, as this identifier may represent a distributor or secondary source rather than the original silicon fabricator. Confirm that the datasheet publication number DS_2N7002_1A corresponds to the exact lot and revision required for your design. Ensure all electrical parameters are validated against your specific operating conditions before finalizing procurement.
Selection Notes
Select this component when a compact N-channel switch is needed for low-voltage applications up to 60 V. The logic-level gate threshold allows for direct drive from standard microcontrollers. Consider the 3 Ω on-resistance at 4.5 V gate drive when designing for efficiency in battery-powered or low-power systems where minimizing voltage drop is critical.
Part Context
This part belongs to the general 2N7002 family of small-signal N-channel MOSFETs. While the industry-standard version often utilizes DMOS technology, this specific variant employs trench technology to achieve its rated performance characteristics. It serves as a common replacement for legacy discrete transistors in modern surface-mount designs requiring reliable switching capabilities.
Replacement Considerations
Cross-reference with other manufacturers offering the 2N7002 designation. Verify pinout compatibility and ensure that alternative sources meet the same 60 V breakdown and 0.6 A continuous current requirements. Check if the alternative uses DMOS or Trench technology, as this affects the on-resistance profile.
