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The Microsemi Corporation 10A060 is an NPN bipolar RF transistor designed for high-frequency applications. It features a maximum collector-emitter breakdown voltage of 24V and operates at a transition frequency of 1GHz. The device supports a maximum collector current of 1.5A and delivers a maximum power output of 13W. It provides a gain range of 7.8dB to 8.5dB and utilizes the 55FT package style with stud mounting capabilities.
Verify component authenticity due to obsolete status. Confirm datasheet revisions match design requirements. Check for equivalent replacements from authorized distributors. Ensure storage conditions comply with moisture sensitivity level specifications. Validate pin compatibility before integration into existing PCB layouts.
Consider the 24V breakdown voltage limit when designing power supply rails. Evaluate thermal dissipation needs given the 13W power rating. Assess impedance matching requirements for the 1GHz frequency band. Compare gain specifications against system noise floor requirements. Review mechanical dimensions of the 55FT package for enclosure fit.
This component belongs to the Microsemi family of discrete semiconductor devices. It serves as a specialized active element for analog RF circuitry. The manufacturer focuses on aerospace and defense solutions. This specific part number represents a legacy product line item no longer in active production.
Public confirmed substitute part numbers are not available in the provided documentation.