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The 2N5770 TRE PBFREE is an N-channel RF transistor manufactured by Central Semiconductor Corp. It utilizes a silicon planar epitaxial process and is housed in a TO-92 package. The device features specific die dimensions of 14.5 x 14.5 mils with a thickness of 7.1 mils. Electrical characteristics include a maximum collector-emitter voltage (Vceo) of 30 V, a maximum collector-base voltage (Vcbo) of 40 V, and a maximum emitter-base voltage (Vebo) of 6 V. The continuous collector current is rated at 200 mA, with a power dissipation capability of 625 mW. Operating temperatures range from -65°C to +150°C.
Verify the exact datasheet specifications against the manufacturer's official documentation before integration. Confirm that the TO-92 through-hole package aligns with the target PCB layout requirements. Ensure thermal management strategies accommodate the 625 mW power dissipation limit under expected operating conditions.
Select this component for designs requiring an NPN small-signal transistor with moderate voltage ratings. The TO-92 package suits prototyping and low-volume production. Compare the 200 mA current rating against circuit load requirements to ensure adequate headroom for reliable operation.
This part belongs to the Central Semiconductor discrete transistor portfolio, specifically within the small-signal category. It serves as a standard replacement for legacy NPN transistors in consumer electronics and communication equipment. The 'TRE' suffix indicates reel packaging, while 'PBFREE' denotes lead-free compliance.
Potential substitutes include other NPN small-signal transistors in TO-92 packages with similar Vceo and Ic ratings. Verify pinout compatibility and thermal resistance values when evaluating alternative components for direct replacement scenarios.