2N3866A TIN/LEAD

Overview

The Central Semiconductor Corp 2N3866A is a silicon planar epitaxial NPN power transistor designed for high-voltage switching and linear amplifier applications. It features a hermetically sealed TO-5 metal can package with a gold-plated base, ensuring reliable performance in demanding environments. The device provides a collector-emitter breakdown voltage of 400V and a continuous collector current rating of 100mA. Key electrical characteristics include a DC current gain (hFE) ranging from 20 to 100 at a collector current of 10mA, and a maximum collector dissipation of 800mW. The component operates within a junction temperature range of -65°C to +200°C, supporting industrial and military-grade specifications.

Feature Summary

• Hermetically sealed TO-5 metal can construction with gold-plated base for superior environmental resistance
• High voltage capability with 400V collector-emitter breakdown voltage for robust switching applications
• Wide operating temperature range extending up to +200°C junction temperature for extreme conditions
• Planar epitaxial silicon design ensuring stable performance and reliability

Applications

• High-voltage switching circuits in industrial control systems
• Linear amplifiers requiring stable operation under extreme temperatures
• Military and aerospace electronic assemblies demanding hermetic sealing
• Power supply regulation stages utilizing high-voltage NPN configurations

Procurement Notes

Verify the specific suffix designation when ordering to confirm the tin/lead plating option, as lead-free variants may exist within the same family. Confirm that the TO-5 package dimensions match your existing footprint requirements. Ensure that the supplier provides traceability documentation if the application requires compliance with military or aerospace standards. Check for any RoHS exemptions if the project mandates restricted substance compliance despite the traditional plating choice.

Selection Notes

Select this component when high voltage isolation and hermetic sealing are critical requirements. The 400V rating makes it suitable for applications exceeding standard low-voltage transistor limits. Consider the thermal management needs given the 800mW dissipation limit in a small metal package. Verify that the required current gain falls within the 20 to 100 range specified for typical operating conditions. Ensure the circuit design accounts for the wide temperature stability offered by the planar epitaxial structure.

Part Context

The 2N3866A belongs to the broader category of silicon NPN power transistors housed in hermetic TO-5 packages. This form factor is historically significant in military and high-reliability electronics due to its robust physical protection against moisture and contaminants. Central Semiconductor Corp manufactures this device using planar epitaxial technology, which enhances breakdown voltage stability compared to older alloy junction designs. The part serves as a direct replacement for various legacy military-specification transistors in retrofitted or maintained equipment.

Replacement Considerations

Direct replacements must match the TO-5 hermetic package and pinout configuration. Verify that substitute parts offer equivalent or higher collector-emitter voltage ratings above 400V. Ensure the alternative device supports the required 100mA continuous current and 800mW power dissipation. Check that the replacement maintains compatibility with the -65°C to +200°C operating temperature range. Confirm that the new component's current gain characteristics align with the original circuit design parameters.