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The Central Semiconductor Corp 2N2857 is a single bulk through-hole NPN bipolar junction transistor (BJT). It operates within a collector-emitter voltage range of up to 40 V and a collector-base voltage of 60 V. The device supports a maximum DC collector current of 150 mA with a power dissipation rating of 500 mW. It features a gain-bandwidth product (fT) of 30 MHz and functions reliably across an operating temperature range from -65 °C to +150 °C.
Verify the specific ordering suffix, such as TIN/LEAD, against the manufacturer's datasheet to confirm lead content and compliance status. Confirm availability directly with authorized distributors, as this component may have limited stock or discontinuation risks. Ensure the package type matches your assembly requirements before placing orders.
Select this component when a robust NPN BJT with high-temperature tolerance is required. Compare the 150 mA current limit and 500 mW power dissipation against circuit demands. Verify that the TO-92 or similar through-hole package fits the board layout. Check if the 30 MHz bandwidth meets the signal frequency requirements of the application.
The 2N2857 belongs to the legacy military-grade transistor series, often associated with ruggedized electronics. Central Semiconductor manufactures this part using silicon technology, maintaining specifications consistent with historical MIL-SPEC standards. It serves as a reliable alternative for older designs requiring proven NPN performance in harsh conditions.
Check for direct cross-references like the 2N2857A variant. Verify pinout compatibility with other NPN transistors in the same voltage and current class. Ensure thermal characteristics match the original design constraints.