2N2369

Overview

The Microchip Technology 2N2369 is an NPN silicon small-signal bipolar junction transistor designed for high-speed switching applications. It features a maximum collector-emitter voltage of 15 V and a continuous collector current rating of 200 mA. The device operates within a temperature range of -65°C to +200°C and dissipates up to 680 mW of power. Packaged in a TO-18 metal can, it offers a minimum DC current gain of 40 at 10 mA and 1 V.

Feature Summary

• High-speed saturated switching capability
• Low power consumption design
• Robust thermal performance with extended operating temperature range

Applications

• High-speed switching circuits
• Low power signal processing
• General purpose NPN silicon transistor applications

Procurement Notes

Verify the specific manufacturer source, as the 2N2369 designation is utilized by multiple producers including Microchip Technology and Semicoa. Confirm that the component meets the required MIL-PRF-19500 screening levels if aerospace or military specifications are necessary for the intended application.

Selection Notes

Select this component when a ruggedized NPN transistor with high-speed switching characteristics is required. Ensure the circuit design accommodates the 15 V collector-emitter voltage limit and the 200 mA maximum current rating. Verify compatibility with the TO-18 through-hole mounting style during PCB layout.

Part Context

This part belongs to the family of NPN silicon planar epitaxial transistors. It serves as a standard replacement for legacy high-speed switching designs requiring reliable performance in demanding thermal environments. The TO-18 package provides hermetic sealing suitable for harsh conditions.

Replacement Considerations

The JAN2N2369A/TR is a verified substitute offering similar electrical characteristics but packaged in TO-206AA-3 with a 360 mW power dissipation rating.