2N5109 PBFREE

2N5109 PBFREE

$2.58
  • Description:RF TRANS NPN 20V 1.2GHZ TO-39
  • Series:-

SKU:f3f1670edcd6 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 20V 1.2GHZ TO-39
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):20V
  • Frequency - Transition:1.2GHz
  • Noise Figure (dB Typ @ f):3dB @ 200MHz
  • Gain:-
  • Power - Max:1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 50mA, 15V
  • Current - Collector (Ic) (Max):400mA
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39
  • Grade:-
  • Qualification:-

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2N5109 PBFREE

Overview

The Central Semiconductor 2N5109 PBFREE is a silicon NPN epitaxial planar RF transistor housed in a hermetically sealed TO-39 case. Designed for high-frequency amplifier applications, it features a collector-base voltage of 40 V and a collector-emitter voltage of 20 V. The device supports a continuous collector current of 400 mA with a power dissipation rating of 1.0 W at ambient temperature and 2.5 W at case temperatures of 75°C. It exhibits a transition frequency (fT) of 1200 MHz at 200 MHz and a noise figure of 3.0 dB under standard test conditions.

Feature Summary

  • Hermetically sealed TO-39 package construction
  • Epitaxial planar silicon NPN design
  • Optimized for high-frequency amplifier circuits

Applications

  • High-frequency amplifier applications
  • RF circuit designs requiring hermetic sealing

Procurement Notes

This component has been officially discontinued by the manufacturer as indicated in Product Discontinuation Notice PDN01114 dated September 6, 2019. Orders are restricted to available stock only, with no further production accepted. Buyers must verify immediate availability through authorized representatives or distributors before placing orders, as supply is limited to existing inventory levels.

Selection Notes

Engineers should evaluate alternative components due to the End-of-Life status of this part. Verify that replacement devices meet the required 40 V collector-base voltage, 1200 MHz transition frequency, and TO-39 mechanical footprint specifications. Ensure any substitute maintains compatibility with high-frequency amplifier requirements and hermetic sealing needs if applicable to the system design.

Part Context

The 2N5109 belongs to the CP229 series of RF transistors manufactured by Central Semiconductor Corp. This specific product line was discontinued on September 6, 2019, per official notice PDN01114. The manufacturer does not provide a direct replacement part number for this device within its current portfolio.

Replacement Considerations

No direct replacement part numbers are provided by the manufacturer. Engineers must source equivalent third-party components that match the electrical parameters and TO-39 package dimensions.

FAQ

What is the maximum operating junction temperature for the 2N5109?

The maximum operating and storage junction temperature range is -65 to +200 °C.

What is the typical DC current gain (hFE) at low currents?

The typical hFE is 210 when measured at VCE=15V and IC=50mA.

How is the lead configuration defined for the TO-39 case?

Lead 1 is the Emitter, Lead 2 is the Base, and Lead 3 is the Collector.

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