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Product Detailed Parameters
- Description：15V 50MA 625MW TH TRANSISTOR-SMA
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Box (TB)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：900MHz
- Noise Figure (dB Typ @ f)：6dB @ 60MHz
- Gain：15dB
- Power - Max：625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 8mA, 1V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5770 APM TIN/LEAD is an NPN RF transistor chip designed for small signal applications. The device utilizes a planar epitaxial silicon process with specific die dimensions of 14.5 x 14.5 mils and a thickness of 7.1 mils. Electrical characteristics include base and emitter bonding pad areas measuring 2.4 x 2.2 mils. Surface metallization consists of aluminum on the top side at 30,000 Angstroms and gold on the back side at 18,000 Angstroms.
Feature Summary
- Utilizes planar epitaxial silicon construction for reliable small signal performance
- Features specific aluminum and gold metallization layers for interconnect stability
- Designed as a dedicated RF transistor chip component
Applications
- Small signal radio frequency amplification circuits
- RF oscillator stages in communication equipment
- High-frequency signal processing modules
Procurement Notes
Verify the exact suffix designation against official manufacturer documentation to ensure correct material composition and lead finish specifications. Confirm that the APM variant aligns with required environmental compliance standards for the target assembly process before finalizing procurement orders.
Selection Notes
Select this component when a discrete NPN RF chip is required rather than a packaged transistor. Ensure the design accommodates bare die mounting or specific packaging solutions compatible with the provided metallization scheme. Verify that the operating frequency range matches the device's intended RF capabilities.
Part Context
This part belongs to the Central Semiconductor small signal transistor family, specifically engineered for radio frequency applications. It represents a semiconductor die configuration distinct from standard through-hole or surface-mount packages, requiring specialized handling during integration into electronic assemblies.
Replacement Considerations
Cross-reference with other NPN RF transistor chips such as CP214, CP223, or CP229 from the same manufacturer. Verify compatibility regarding die size, metallization requirements, and electrical parameters before substituting.
