ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF TRANS NPN 30V 500MHZ TO-39
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：30V
- Frequency - Transition：500MHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：5W
- DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 50mA, 5V
- Current - Collector (Ic) (Max)：400mA
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39
- Grade：-
- Qualification：-
Download product information
Overview
The Central Semiconductor 2N3866 PBFREE is an NPN silicon high-frequency transistor housed in a hermetically sealed TO-39 package. It features a collector-base voltage of 55 V, a collector-emitter voltage of 30 V, and continuous collector current of 0.4 A. Power dissipation reaches 5.0 W at 25°C case temperature. The device exhibits a transition frequency (fT) of 500 MHz at 15 V and 50 mA. DC current gain ranges from 10 to 200 under standard test conditions. Operating junction temperatures span from -65°C to +200°C.
Feature Summary
- Hermetically sealed TO-39 metal package for reliable RF performance
- Designed specifically for high-frequency amplifier and oscillator applications
- Capable of operating at elevated junction temperatures up to 200°C
Applications
- High-frequency amplifier circuits
- RF oscillator designs
- Microwave signal processing systems
Procurement Notes
This component has been officially discontinued by the manufacturer and is classified as End of Life. Orders are restricted to available stock only, with no further production planned. Buyers must verify inventory availability directly with authorized distributors or sales representatives before committing to purchases.
Selection Notes
Engineers should evaluate the 500 MHz transition frequency and 5.0 W power dissipation capabilities against specific circuit requirements. The hermetic TO-39 package provides thermal stability but requires appropriate mounting techniques. Verify that the 30 V collector-emitter voltage rating aligns with the maximum supply voltages in the target design.
Part Context
The 2N3866 belongs to a series of NPN silicon RF transistors manufactured by Central Semiconductor Corp. These devices utilize specialized die processes optimized for high-frequency operation. The product line includes variants such as the 2N3866A, which offers enhanced transition frequency specifications while maintaining identical electrical ratings and mechanical dimensions.
Replacement Considerations
No direct replacement part numbers are currently listed by the manufacturer. Customers requiring alternatives should contact engineering support for technical assistance in locating compatible components.
