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Product Detailed Parameters
- Description：15V 50MA 625MW TH TRANSISTOR-SMA
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：900MHz
- Noise Figure (dB Typ @ f)：6dB @ 60MHz
- Gain：15dB
- Power - Max：625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 8mA, 1V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92
- Grade：-
- Qualification：-
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Overview
The 2N5770 TRE TIN/LEAD is an NPN RF transistor chip manufactured by Central Semiconductor Corp. It utilizes an epitaxial planar process with a die size of 14.5 x 14.5 mils and a thickness of 7.1 mils. The component features aluminum top-side metalization (30,000Å) and gold back-side metalization (18,000Å). Bonding pad areas are specified at 2.4 x 2.2 mils for both the base and emitter. This device is categorized as a small signal transistor designed for radio frequency applications.
Feature Summary
- Epitaxial planar construction for reliable RF performance
- Gold back-side metalization for thermal and electrical characteristics
- Small signal design optimized for high-frequency operations
Applications
- Radio frequency amplification circuits
- High-frequency signal processing
- RF communication systems
Procurement Notes
Verify the specific ordering suffix 'TRE' to confirm reel packaging and tin-lead termination compliance. Confirm RoHS status details as required by project specifications. Ensure the manufacturer identification matches Central Semiconductor Corp documentation. Validate that the tin-lead finish meets environmental regulations for the intended deployment region before finalizing procurement orders.
Selection Notes
Select this component when an NPN RF transistor chip is required for small signal applications. The epitaxial planar process supports high-frequency operation. Verify that the physical dimensions and bonding pad sizes fit the target assembly constraints. Ensure the voltage and current ratings align with the specific circuit requirements for RF amplification tasks.
Part Context
This part belongs to the Central Semiconductor small signal transistor family. It shares the epitaxial planar technology found in other RF chips like the CP214 and CP223 series. The 2N5770 designation indicates a standardized NPN silicon transistor configuration. It is distinct from through-hole packages, focusing on chip-level integration for specialized RF modules.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with Fairchild Semiconductor or Micro Electronics datasheets for equivalent NPN RF transistors if necessary. Verify pinout and electrical parameters against alternative sources before substitution.
