2N5770 TIN/LEAD

Overview

The Central Semiconductor Corp 2N5770 TIN/LEAD is an NPN silicon RF transistor chip designed for high-frequency applications. The device utilizes an epitaxial planar process with a die size of 14.5 x 14.5 mils and a thickness of 7.1 mils. Electrical characteristics include a collector-emitter breakdown voltage (BVceo) of 12V and a transition frequency (fT) of 8 GHz. The component features aluminum top-side metalization (30,000Å) and gold back-side metalization (18,000Å). Bonding pad areas are specified at 2.4 x 2.2 mils for both base and emitter terminals.

Feature Summary

• High-frequency operation capability up to 8 GHz
• Epitaxial planar silicon construction
• Gold back-side metalization for thermal and electrical performance

Applications

• RF amplifier circuits
• High-frequency oscillator designs
• Microwave signal processing modules

Procurement Notes

Verify the specific TIN/LEAD suffix availability directly with Central Semiconductor sales representatives, as plating types may vary by production batch. Confirm current manufacturing status and lead times prior to order placement, as RF chip components often have limited stock or long production cycles compared to standard discrete packages.

Selection Notes

Select this component when a small-signal NPN RF transistor with an 8 GHz transition frequency is required. Ensure the design accommodates the bare chip form factor or appropriate mounting substrate. Verify that the 12V collector-emitter voltage rating meets the circuit's maximum operating conditions and power dissipation requirements.

Part Context

This part belongs to Central Semiconductor's portfolio of small-signal RF transistors. It shares similar epitaxial planar construction with other CP-series RF chips from the manufacturer. The 2N5770 designation indicates a standardized NPN RF transistor specification, often used in communication equipment requiring stable high-frequency gain.

Replacement Considerations

Fairchild Semiconductor MPS5179 is listed as a similar NPN RF transistor. Verify pinout compatibility and exact fT specifications before substitution. Other Central Semiconductor CP-series chips may offer alternative packaging but require electrical parameter matching.