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The Central Semiconductor Corp 2N3866 TIN/LEAD is a silicon NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It utilizes a TO-92-3 through-hole package configuration. The device supports a collector-emitter voltage of 30 V, a collector-base voltage of 40 V, and an emitter-base voltage of 5 V. It handles a continuous collector current of 100 mA with a maximum power dissipation of 625 mW. The component operates within a temperature range from -65 °C to +150 °C.
Verify the specific ordering suffix required for leaded terminations when sourcing this component. Confirm that the manufacturer's datasheet specifications align with the intended circuit requirements before procurement. Ensure compliance with relevant material regulations applicable to the tin/lead finish used in this specific variant.
Select this component based on its 30 V collector-emitter rating and 100 mA current capacity. Verify that the TO-92-3 package fits the available board space. Compare the hFE characteristics against circuit requirements to ensure adequate gain. Consider thermal management needs given the 625 mW power dissipation limit in the specified package.
This part belongs to the standard NPN transistor family produced by Central Semiconductor. It serves as a common discrete semiconductor device for analog and digital logic interfaces. The 2N3866 designation identifies it within the JEDEC registration system for general-purpose small-signal transistors.
Consult official cross-reference lists for verified equivalents. Common substitutes include the 2N3904 or BC547 series, provided pinouts and electrical ratings match the application constraints.