2N3663

Overview

The Fairchild Semiconductor 2N3663 is an NPN silicon RF transistor housed in a TO-92 package. It operates with a collector-emitter voltage of 12V and supports a maximum collector current of 50mA. The device features a transition frequency of 2.1GHz and a power dissipation rating of 350mW. Designed for radio frequency applications, it functions effectively within a collector current range of 1.0 mA to 30 mA.

Feature Summary

• Designed for use as RF amplifiers, oscillators, and multipliers
• Optimized for operation with collector currents between 1.0 mA and 30 mA

Applications

• RF amplifier circuits
• Oscillator designs
• Frequency multiplier stages

Procurement Notes

Verify the component authenticity by checking the manufacturer marking against official Fairchild Semiconductor documentation. Ensure the TO-92 package matches the specified pinout configuration. Confirm that the part number corresponds to the NPN silicon variant intended for radio frequency applications rather than general-purpose switching.

Selection Notes

Select this component when designing circuits requiring small-signal RF performance at frequencies up to 2.1GHz. Consider the 12V breakdown voltage and 350mW thermal limits for appropriate biasing. This transistor is suitable for low-power applications where high-frequency gain and stability are required within a standard through-hole package.

Part Context

The 2N3663 belongs to the family of bipolar RF transistors manufactured by Fairchild Semiconductor. It utilizes Process 43 technology to achieve specific radio frequency characteristics. As an NPN device, it provides complementary options within the company's discrete semiconductor portfolio for various RF system architectures.

Replacement Considerations

Consult official substitution lists for equivalent NPN RF transistors with matching voltage and frequency ratings.