2N3799

Overview

The Microchip Technology 2N3799 is a silicon PNP bipolar junction transistor (BJT) designed for low-noise amplifier applications. It features a maximum DC collector current of 50 mA and a collector-emitter voltage rating of 60 V. The device operates within a temperature range of -65°C to +200°C and dissipates up to 360 mW of power. Key electrical characteristics include a gain-bandwidth product of 80 MHz, a minimum DC current gain (hFE) of 300, and a maximum hFE of 900. Packaged in a TO-18-3 through-hole configuration, it serves as a high-gain, low-power discrete component.

Feature Summary

• Optimized for low-noise amplification tasks
• High DC current gain ranging from 300 to 900
• Extended thermal operation capability up to 200°C

Applications

• Low-noise signal amplification circuits
• General-purpose small-signal switching
• Audio pre-amplifier stages

Procurement Notes

Verify the manufacturer designation carefully, as Central Semiconductor also produces a part with this number. Confirm the specific datasheet aligns with Microchip Technology specifications before integration. Ensure the TO-18-3 package matches the board layout requirements. Check RoHS compliance status if required by the final assembly standards.

Selection Notes

Select this component when high current gain and low noise are critical for the design. The TO-18-3 metal can package requires appropriate mounting considerations compared to plastic packages. Verify that the 60 V voltage rating meets the circuit's peak operating conditions. Consider the 360 mW power dissipation limit during thermal analysis.

Part Context

This part belongs to the 2N37 series of bipolar transistors manufactured by Microchip Technology. It is categorized under single NPN/PNP discrete transistors. The 2N3799 specifically addresses the need for high-gain, low-power amplification in legacy or specialized military-grade designs requiring wide temperature stability.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing should be performed using exact electrical parameter matching rather than direct pin-to-pin substitution without verifying internal structure differences.