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Product Detailed Parameters
- Description：RF TRANS NPN 30V 800MHZ TO-39
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：30V
- Frequency - Transition：800MHz
- Noise Figure (dB Typ @ f)：-
- Gain：10dB
- Power - Max：5W
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 50mA, 5V
- Current - Collector (Ic) (Max)：400mA
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N3866A PBFREE is a silicon NPN RF transistor housed in a hermetically sealed TO-39 package. It features a maximum collector-emitter voltage of 30 V and a collector-base voltage of 55 V. The device supports an emitter-base voltage of 3.5 V and operates with a current-gain bandwidth product up to 800 MHz. Designed for high-frequency applications, it is suitable for use in VHF and UHF equipment amplifier stages.
Feature Summary
- Hermetically sealed TO-39 package construction
- Silicon NPN epitaxial planar design
- Optimized for VHF and UHF frequency operations
Applications
- VHF and UHF amplifier circuits
- Frequency multiplier stages
- Oscillator configurations
- Driver and pre-driver output stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free compliance and pinout configuration. Ensure the selected variant matches the required hermetic sealing specifications for the intended environmental conditions. Cross-reference the datasheet electrical limits with system requirements before finalizing procurement orders.
Selection Notes
Select this component for designs requiring reliable RF performance in harsh environments due to its hermetic seal. Evaluate the 30 V collector-emitter rating against peak signal voltages. Consider the TO-39 footprint constraints and thermal management needs for high-frequency amplifier or oscillator implementations within the specified voltage parameters.
Part Context
This part belongs to the family of silicon NPN RF transistors manufactured by Central Semiconductor. It is engineered for discrete low-power microwave and radio frequency applications. The device provides stable operation in amplifier and oscillator circuits, serving as a critical active element in VHF and UHF communication systems requiring robust packaging.
Replacement Considerations
Consult official substitution lists for equivalent NPN RF transistors in TO-39 packages. Verify that alternative parts match the 30 V VCEO and 800 MHz bandwidth specifications. Ensure hermetic sealing requirements are met if replacing in existing sealed assemblies.
