2N3866 TRAY

2N3866 TRAY

  • Description:RF TRANS NPN 30V 500MHZ TO-39
  • Series:-

SKU:4b8c5c6a49bc Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 30V 500MHZ TO-39
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tray
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):30V
  • Frequency - Transition:500MHz
  • Noise Figure (dB Typ @ f):-
  • Gain:10dB
  • Power - Max:5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 50mA, 5V
  • Current - Collector (Ic) (Max):400mA
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39
  • Grade:-
  • Qualification:-

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2N3866 TRAY

Overview

The Central Semiconductor Corp 2N3866 is a silicon NPN general-purpose bipolar junction transistor (BJT) housed in a TO-92 package. It features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 800mA. The device offers a transition frequency of 300MHz and a DC current gain ranging from 100 to 700 at specified operating conditions. Designed for through-hole mounting, it operates within a temperature range of -65°C to +200°C junction temperature with a power dissipation rating of 500mW.

Feature Summary

  • High-frequency operation capability suitable for RF amplification
  • Robust thermal performance with extended junction temperature limits
  • Standardized pinout compatible with legacy TO-92 designs

Applications

  • General-purpose switching circuits
  • Low-power RF amplification stages
  • Audio pre-amplifier applications

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm tray packaging requirements. Ensure compliance with RoHS directives if lead-free termination is required for the assembly process. Cross-reference datasheet electrical characteristics with design specifications prior to final procurement decisions.

Selection Notes

Select this component when a standard NPN BJT with moderate power handling and high-frequency response is needed. Compare hFE ranges and Vceo ratings against circuit requirements. Consider thermal management strategies given the 500mW dissipation limit in enclosed environments.

Part Context

This part belongs to the widely recognized 2N series of transistors, often serving as a direct replacement for older military or industrial grade components. Central Semiconductor manufactures these devices to meet stringent reliability standards, maintaining compatibility with classic electronic designs while offering modern manufacturing consistency.

Replacement Considerations

Direct replacements include the 2N2222A and 2N3904, though electrical parameters such as current gain and saturation voltage may vary. Verify pinout compatibility and ensure that the substitute device meets the required voltage and current ratings for the specific application.

2N3866 TRAY2N3866 TRAY

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