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Product Detailed Parameters
- Description：RF TRANS NPN 12V 2GHZ TO-72
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：2GHz
- Noise Figure (dB Typ @ f)：4.5dB @ 200MHz
- Gain：15dB
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 3mA, 1V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AF, TO-72-4 Metal Can
- Supplier Device Package：TO-72
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor 2N5179 PBFREE is a silicon NPN RF transistor manufactured via the epitaxial planar process. Designed for VHF and UHF applications, it operates within a collector-base voltage of 20 V and a collector-emitter voltage of 12 V. The device supports a continuous collector current of 50 mA with a power dissipation of 200 mW at ambient temperature. Key electrical characteristics include a transition frequency (fT) ranging from 900 MHz to 2000 MHz and a minimum DC current gain (hFE) of 25. It features a low base-collector capacitance of 1.0 pF and operates across a junction temperature range of -65°C to +200°C.
Feature Summary
- Epitaxial planar construction optimized for high-frequency performance
- Suitable for VHF/UHF amplifier, oscillator, and converter circuits
- Low noise figure and high transition frequency for signal integrity
Applications
- VHF/UHF amplifiers
- Oscillators
- Converters
Procurement Notes
Verify that the ordering suffix matches the required plating specification. The PBFREE suffix indicates lead-free plating, while TIN/LEAD denotes tin-lead plating. Confirm the TO-72 package type and pinout configuration before integration. Ensure compliance with environmental regulations applicable to the target deployment region.
Selection Notes
Select this component when designing circuits requiring an NPN transistor with high transition frequency and low noise characteristics in the VHF/UHF bands. Evaluate thermal resistance values to ensure adequate heat dissipation within the specified operating temperature range. Compare hFE and fT specifications against circuit requirements to guarantee stable operation under varying load conditions.
Part Context
This component belongs to the family of silicon NPN RF transistors produced by Central Semiconductor Corp. It utilizes the TO-72 metal can package, which provides robust shielding and thermal management for radio frequency applications. The device is part of the manufacturer's standard discrete semiconductor lineup focused on high-performance analog and RF solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical parameters with alternative manufacturers if sourcing constraints require substitution.
