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The Vishay 10ETS08S is a single-element silicon rectifier diode rated for 10 A average forward current and 800 V maximum repetitive reverse voltage. It features a low forward voltage drop of 1.1 V at 25 °C junction temperature and supports a non-repetitive surge current of up to 200 A. The device operates within a junction temperature range of -40 °C to 150 °C and utilizes glass passivation technology. Available in D2PAK (SMD-220) and TO-220AC packages, it is designed for high-voltage, high-power applications.
Verify the specific package variant required, as the part number suffix indicates either TO-220AC or D2PAK (SMD-220). Confirm lead-free status if applicable, as ordering codes distinguish between standard production and PbF versions. Ensure thermal management aligns with the specified junction-to-case resistance of 2.5 °C/W for DC operation.
Select this component for high-voltage input rectification where low forward loss is critical. The 800 V rating suits general high-voltage power supplies. Consider the D2PAK package for surface-mount designs requiring identical outlines to other Vishay High Power Products devices. Verify thermal constraints against the 10 A rating at elevated case temperatures.
This device belongs to the 10ETS..S High Voltage Series from Vishay High Power Products. The series includes variants with 1000 V and 1200 V ratings (10ETS10S, 10ETS12S), sharing the same 10 A current rating and package options. The series is engineered for industrial applications requiring robust performance in high-power environments.
Cross-reference with 10ETS10S or 10ETS12S if higher voltage ratings are needed while maintaining the same current and package specifications. Ensure any substitute matches the D2PAK or TO-220AC footprint and thermal characteristics.