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The Central Semiconductor Corp 1N4001G BK is a silicon rectifier diode designed for general-purpose applications. It features a glass passivated junction and is housed in a DO-41 axial leaded package. The device supports an average forward rectified current of 1A and withstands a maximum repetitive peak reverse voltage of 50V. It exhibits a low leakage current and operates within a junction temperature range from -65°C to +175°C.
Verify the specific manufacturer lot code and date code upon receipt, as components may be sourced from various authorized distributors or surplus channels. Confirm RoHS compliance status explicitly with the supplier, as historical production runs may differ from current manufacturing standards. Ensure the DO-41 package dimensions match your PCB footprint requirements before finalizing assembly processes.
Select this component when a robust, standard recovery silicon diode is required for low-frequency rectification tasks. The DO-41 package offers reliable through-hole mounting for industrial and consumer electronics. Consider the 50V rating carefully to ensure adequate voltage headroom against peak inverse voltages in the target circuit design.
This part belongs to the widely recognized 1N400x series of general-purpose silicon rectifiers. These devices are industry standards for basic power conversion and signal isolation tasks. The 1N4001 variant specifically denotes the 50V rating within this family, distinguishing it from higher voltage counterparts like the 1N4002 or 1N4003.
Direct parametric equivalents include the 1N4001GP and generic 1N4001 variants from manufacturers such as Vishay, Diotec, and onsemi. Verify that substitute parts maintain the same DO-41 package outline and thermal characteristics to ensure mechanical compatibility without redesigning the board layout.