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Product Detailed Parameters
- Description：MOSFET N-CH 650V 10A TO220F
- Series：*
- Mfr：UMW
- Package：Tube
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
UMW 10N65F is an N-channel enhancement mode power MOSFET designed for high-voltage switching applications. It features a drain-source voltage (V_DSS) of 650V and a continuous drain current (I_D) of 10A at 25°C. The device utilizes advanced planar DMOS technology to achieve low on-resistance, specified as R_DS(on) ≤ 0.8Ω at V_GS = 10V. Packaged in TO-220F, it offers thermal efficiency without requiring additional insulating pads.
Feature Summary
- Planar DMOS technology provides low on-resistance and fast switching performance.
- TO-220F insulated package eliminates the need for external insulating pads during assembly.
- High breakdown voltage capability suitable for demanding power conversion environments.
Applications
- AC-DC converters
- SMPS (Switched Mode Power Supplies)
- Motor control circuits
Procurement Notes
Verify the specific manufacturer source when ordering, as the 10N65F designation is used by multiple semiconductor fabricators including UMW, Ever, and others. Confirm that the datasheet matches the required electrical parameters, particularly the on-resistance threshold and package dimensions, to ensure compatibility with existing designs.
Selection Notes
Select this component for applications requiring 650V blocking capability with moderate current handling up to 10A. The TO-220F package is ideal for through-hole mounting where space allows. Ensure the gate drive voltage supports the specified R_DS(on) conditions for optimal efficiency.
Part Context
The 10N65F belongs to the family of 650V N-channel power MOSFETs commonly used in offline power supplies. These devices are standard replacements for older silicon carbide or high-voltage bipolar transistors in cost-sensitive consumer and industrial electronics.
Replacement Considerations
Cross-reference with other manufacturers' 10N65F parts such as those from Ever Semiconductor or Guangdong Youtai Semico. Verify pinout compatibility and thermal resistance values before substitution.
