ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH -60V 90A TO-263
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：162 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：18517 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：300W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Download product information
Overview
The AM110P06-06B is a P-Channel Silicon MOSFET manufactured by Analog Power Inc. It features a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) of -90A at Ta. The device exhibits a maximum on-resistance (RDS(on)) of 6 mOhm. It is housed in a surface-mount TO-263 package, designed for high-power applications requiring efficient switching capabilities.
Feature Summary
- P-Channel silicon construction for high-side switching applications
- Low on-resistance for improved power efficiency
- Surface-mount TO-263 package for thermal management
Applications
- High-side switching circuits
- Power regulation modules
- Inrush limiting protection
Procurement Notes
Verify the exact suffix '06B' against manufacturer documentation to confirm specific binning or testing criteria. Ensure compatibility with TO-263 footprint designs. Confirm operating temperature ranges align with system requirements before integration.
Selection Notes
Select this component for applications requiring 60V P-Channel capability with high current handling up to 90A. Consider the TO-263 package for adequate heat dissipation. Compare RDS(on) specifications against alternative devices for optimal efficiency in power conversion designs.
Part Context
This part belongs to Analog Power's single FET and MOSFET lineup. It complements other low RDS(on) P-Channel devices like the AM90P10 series, targeting similar high-side switching and regulation markets within the 48V and higher bus voltage domains.
Replacement Considerations
Cross-reference with equivalent P-Channel MOSFETs in TO-263 packages offering 60V VDS and >90A ID. Verify pinout compatibility and thermal resistance characteristics before substitution.
