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Product Detailed Parameters
- Description：MOSFET P-CH -40V 130A TO-263
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.2mOhm @ 110A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：118 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：15593 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AM110P04-04m2B is a P-Channel MOSFET manufactured by Analog Power Inc., designed for surface mount applications in the TO-263 package. It features a drain-source voltage rating of 40 V and supports a continuous drain current of 130 A at case temperature. The device handles a maximum power dissipation of 300 W under case conditions. It operates within a junction temperature range of -55°C to 175°C, providing robust thermal performance for high-current switching environments.
Feature Summary
- P-Channel configuration for high-side switching applications
- High current handling capability with 130A continuous drain rating
- Surface Mount Technology (SMT) compatibility via TO-263 package
- Extended operating temperature range up to 175°C junction temperature
Applications
- High-side power switching circuits
- Power regulation modules requiring low on-resistance
- Inrush current limiting systems
- DC-DC converter input stages
Procurement Notes
Verify the manufacturer designation as Analog Power Inc. when sourcing this component. Confirm the specific suffix '04m2B' matches the required TO-263 surface mount package variant. Ensure the datasheet confirms the 40V/130A specifications for your design requirements. Cross-reference the RoHS compliance status if environmental regulations apply to your assembly process.
Selection Notes
Select this component for designs requiring a P-Channel MOSFET with high current capacity in a compact surface mount footprint. The TO-263 package facilitates efficient heat dissipation for the 300W power rating. Consider the 40V voltage rating relative to your system bus voltage. Evaluate thermal management strategies to maintain junction temperatures within the specified -55°C to 175°C range during operation.
Part Context
This part belongs to the Analog Power Inc. single FET and MOSFET product line. It is categorized as a discrete semiconductor device intended for power management applications. The TO-263 packaging indicates its suitability for automated surface mount assembly processes commonly used in modern electronics manufacturing.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering alternative manufacturers or generic equivalents.
