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Product Detailed Parameters
- Description：MOSFET N-CH 650V 12A TO-220
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：800mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23 nC @ 6 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2691 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Replacement Considerations
No verified public substitute part numbers are available for the AM12N65P. Cross-referencing requires independent electrical parameter validation against potential alternatives.
