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The Vishay 10TTS08 is a high voltage phase control silicon controlled rectifier (SCR) designed for medium power switching applications. It features an 800 V maximum repetitive peak reverse voltage and supports a 10 A RMS on-state current with a 6.5 A average rating at 180° conduction. The device utilizes glass passivation technology to ensure reliable operation up to a 125 °C junction temperature. Packaged in a TO-220AC outline, it offers a typical on-state voltage drop of 1.15 V at 6.5 A and withstands non-repetitive surge currents up to 140 A.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status and package variations. Ensure the selected variant matches the required thermal resistance and mounting torque specifications for the intended application environment. Cross-reference the document number 93690 for the most current technical parameters and absolute maximum ratings before finalizing procurement decisions.
Select this component based on its 800 V blocking capability and 10 A RMS current handling capacity. Consider the thermal management requirements, as the device requires a heatsink to maintain the junction temperature within the -40 to 125 °C operating range. Evaluate the gate triggering characteristics, including the maximum DC gate current and voltage requirements, to ensure compatibility with the driving circuitry.
This SCR belongs to the 10TTS08 High Voltage Series from Vishay High Power Products. The series is engineered for industrial-level qualification and includes variants such as the SMD-220 packaged 10TTS08S. The standard production version is available in the TO-220AC package, providing a robust solution for high-voltage phase control tasks where reliability and thermal performance are critical.
Consult the official datasheet for direct cross-reference recommendations. Verify that any substitute part maintains equivalent voltage ratings, current capacities, and package dimensions to ensure mechanical and electrical compatibility without redesigning the host system.
The 10TTS08 can withstand a maximum non-repetitive surge current of 140 A under conditions of no voltage reapplied.
The typical on-state voltage drop is 1.15 V at 25 °C junction temperature; however, the characteristic curve indicates variation across the operating temperature range.
The device has a maximum dV/dt rating of 150 V/µs at a junction temperature of 25 °C.