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The Vishay 10TTS08S is a surface mountable phase control silicon controlled rectifier (SCR) designed for medium power switching applications. It features an 800 V maximum repetitive peak reverse voltage and supports a maximum average on-state current of 6.5 A at a case temperature of 112 °C with 180° conduction. The device operates within a junction temperature range of -40 to 125 °C and utilizes glass passivation technology for reliable performance. It is housed in a TO-220AC D2PAK package.
Verify the specific ordering suffix against the manufacturer's documentation to confirm packaging orientation and lead-free status. The datasheet indicates that suffixes such as TRL or TRR denote left or right orientation reels respectively. Confirming these details ensures compatibility with automated assembly equipment and meets environmental compliance requirements without altering the component's electrical function.
Select this component based on the required voltage rating and thermal management capabilities. Ensure the application circuit can handle the specified dV/dt and dI/dt limits to prevent false triggering. Consider the thermal resistance characteristics when designing the PCB footprint, as the current ratings are dependent on the mounting surface and ambient cooling conditions provided by the substrate material.
This SCR belongs to the 10TTS08S High Voltage Series from Vishay General Semiconductor. It is part of a broader family of surface mountable thyristors intended for industrial level qualification. The series includes variants optimized for converter grade operations and different package configurations to support diverse high-power electronic design needs.
Consult official substitution lists for verified equivalents. Cross-referencing pinouts, voltage ratings, and thermal specifications is essential when considering alternative components to ensure functional parity in existing designs.
The device supports a maximum non-repetitive surge current of 140 A under conditions where no voltage is reapplied, and 120 A when rated VRRM is applied.
The maximum required DC gate current to trigger decreases as temperature increases, ranging from 20 mA at -65 °C to 10 mA at 125 °C.
The typical turn-off time (tq) is specified as 10 µs at a junction temperature of 125 °C.