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The 2N1776A is a silicon NPN transistor manufactured by Central Semiconductor Corp. It is housed in a TO-5 metal can package with three leads, designed for through-hole mounting. The device features a maximum collector-emitter voltage (VCEO) of 40 V and a maximum collector-base voltage (VCBO) of 60 V. It supports a continuous DC collector current of 800 mA and has a power dissipation rating of 800 mW at 25°C ambient temperature. The minimum DC current gain (hFE) is specified as 70. The component operates within a junction temperature range of -65°C to +200°C.
Verify the manufacturer part number against official Central Semiconductor documentation to ensure authenticity. Confirm RoHS compliance status if required by specific project regulations. Check datasheet revisions for any updates to electrical characteristics or mechanical dimensions before finalizing procurement specifications.
Select this component when a hermetically sealed NPN transistor with moderate current handling and high voltage tolerance is required. Ensure the application circuit stays within the 800 mA collector current and 800 mW power dissipation limits. Consider the TO-5 package size constraints during PCB layout and thermal management planning.
The 2N1776A belongs to the standard military-grade transistor lineup produced by Central Semiconductor. This series is known for robust performance in harsh environments. The company specializes in discrete semiconductors, offering both standard and custom solutions for industrial and defense sectors.
Consult official cross-reference lists from Central Semiconductor for verified substitutes. Generic equivalents may differ in hermetic sealing or gain ranges. Verify pinout compatibility and thermal resistance values before implementing any alternative components.
The maximum junction temperature is 200°C.
No, the 2N1776A is specifically packaged in a TO-5 metal can for through-hole mounting.
The minimum DC current gain (hFE) is 70.