123NQ080

123NQ080

$10.63
  • Description:DIODE SCHOTTKY 80V 120A D-67
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Bulk

SKU:8469bbbb093f Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE SCHOTTKY 80V 120A D-67
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Bulk
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io):120A
  • Voltage - Forward (Vf) (Max) @ If:910 mV @ 120 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 80 V
  • Capacitance @ Vr, F:2650pF @ 5V, 1MHz
  • Mounting Type:Chassis Mount
  • Package / Case:D-67 HALF-PAK
  • Supplier Device Package:D-67 HALF-PAK
  • Operating Temperature - Junction:-
  • Grade:-
  • Qualification:-

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123NQ080

Overview

The Vishay General Semiconductor - Diodes Division 123NQ080 is a high-current Schottky rectifier module rated for 120 A average forward current and an 80 V maximum DC reverse voltage. It utilizes proprietary barrier technology to ensure reliable operation up to a 175 °C junction temperature with low reverse leakage at elevated temperatures. The device features a Half-Pak module case style, offering a lower profile and easier mounting compared to parallel DO-5 configurations. Key electrical characteristics include a maximum forward voltage drop of 0.91 V at 120 A and a peak non-repetitive surge current capability of 16,000 A.

Feature Summary

  • Proprietary barrier technology enables reliable operation up to 175 °C junction temperature while maintaining low reverse leakage at high temperatures.
  • Half-Pak module design provides a unique high-power configuration that replaces two parallel DO-5 diodes with a lower profile and simplified mounting.
  • High purity, high temperature epoxy encapsulation enhances mechanical strength and moisture resistance.
  • Guard ring structure improves ruggedness and ensures long-term reliability under demanding conditions.

Applications

  • Switching power supplies
  • Converters
  • Free-wheeling diodes
  • Reverse battery protection

Procurement Notes

Verify the specific suffix designation when ordering, as the datasheet indicates variations in terminal polarity between standard (123NQ...) and reversed (123NQ...R) versions. Confirm thermal interface requirements, noting the typical case-to-heatsink thermal resistance assumes a smooth, greased mounting surface. Ensure mounting torque specifications are strictly adhered to within the defined minimum and maximum limits to maintain package integrity and thermal performance.

Selection Notes

Select this component for applications requiring high current handling in a compact form factor. The 123NQ080 is suitable where a single module must replace multiple discrete parallel diodes to save board space. Consider the 175 °C operating limit for high-temperature environments. Evaluate the 0.40 °C/W junction-to-case thermal resistance against your heatsinking capabilities to ensure safe operation within the specified current ratings.

Part Context

This part belongs to the 123NQ...(R) series, which includes variants with different voltage ratings such as 90 V and 100 V. All members of this series share the same Half-Pak module case style and core technical architecture optimized for high current and high-temperature industrial applications. The series is designed to offer superior mounting ease and lower profile compared to traditional discrete diode assemblies.

Replacement Considerations

The datasheet explicitly states that this module replaces two parallel DO-5 diodes. No other specific substitute part numbers are documented in the provided source material.

123NQ080123NQ080
$10.63
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