1N3600 TR TIN/LEAD

Overview

The Central Semiconductor Corp 1N3600 TR TIN/LEAD is a silicon planar epitaxial switching diode housed in the DO-35 through-hole package. It features a maximum repetitive peak reverse voltage of 50 V and a continuous forward current rating of 200 mA, with surge capabilities up to 4.0 A. The device offers ultra-fast switching characteristics with a maximum diode capacitance of 2.5 pF and a power dissipation rating of 500 mW. Designed for high-speed applications, it operates within a temperature range of -65°C to +200°C.

Feature Summary

• Ultra-fast switching speed enabled by silicon planar epitaxial construction
• Miniature DO-35 form factor suitable for space-constrained designs
• Low junction capacitance for high-frequency signal integrity

Applications

• High-speed digital logic circuits
• Clamping and protection in RF systems
• General-purpose rectification in low-power electronics

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm lead-free status or tin/lead composition. Confirm that the 'TR' designation aligns with your required reel packaging specifications. Ensure the DO-35 through-hole footprint matches your PCB layout constraints before finalizing procurement.

Selection Notes

Select this component when ultra-fast recovery and low capacitance are critical for signal fidelity. The 50 V reverse voltage rating suits low-voltage logic interfaces. Consider the 500 mW power dissipation limit for thermal management in dense assemblies.

Part Context

This part belongs to the general-purpose and switching diode category from Central Semiconductor. It utilizes silicon planar technology to achieve superior switching performance compared to standard rectifiers. The DO-35 package provides a robust mechanical solution for automated through-hole assembly processes.

Replacement Considerations

Public confirmed substitute part numbers include the 1N4150 TR PBFREE from the same manufacturer family.