12N10

$0.65

Description：MOSFET N-CH 100V 15A DPAK
Series：-
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7e6bc72575f5 Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 15A DPAK
Series：-
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：114mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：3W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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12N10

Overview

The UMW 12N10 is an N-Channel MOSFET with a 100 V drain-source voltage rating. It features a maximum continuous drain current of 13 A at a case temperature of 25 °C and a pulsed drain current capability of 40 A. The device exhibits a typical on-state resistance of 120 mΩ at VGS = 10 V and ID = 3 A. Total gate charge is typically 24 nC under standard test conditions. Thermal performance includes a junction-to-case thermal resistance of 0.85 °C/W (typical) and a maximum power dissipation of 96 W at TC = 25 °C.

Feature Summary

Integrated body diode with defined forward voltage and reverse recovery characteristics for synchronous rectification or freewheeling applications.
Optimized gate charge parameters to facilitate efficient switching in high-frequency power conversion circuits.
Robust avalanche energy rating supporting single-pulse avalanche operation for enhanced circuit reliability.

Applications

Primary side switch in isolated power supply topologies
DC-DC converter output stages
Synchronous rectification modules

Procurement Notes

Verify the specific package variant, as the datasheet indicates TO-252 mechanical data. Confirm that the ordering code matches the required tape and reel quantity of 2500 units. Ensure the component meets RoHS compliance standards if required by the manufacturing process. Cross-reference the manufacturer's latest revision notes for any updates to electrical limits or thermal ratings before finalizing the bill of materials.

Selection Notes

Select this component when a 100 V breakdown voltage and moderate current handling are required. Evaluate the thermal management strategy carefully, as power dissipation drops significantly from 96 W at 25 °C case temperature to 3 W at 25 °C ambient temperature. Consider the gate charge requirements against the driving capability of the control IC to ensure adequate switching speeds without excessive drive losses.

Part Context

This part belongs to the UMW discrete semiconductor portfolio, specifically within the N-Channel MOSFET category. It is designed for general-purpose power switching applications requiring low on-resistance and reliable thermal performance. The device utilizes a surface-mount package suitable for automated assembly processes in consumer electronics and industrial power supplies.

Replacement Considerations

Check for direct pin-compatible alternatives with matching VDS and RDS(on) specifications. Verify that substitute components offer equivalent or superior avalanche energy ratings and thermal resistance values to maintain system safety margins.