15N10

$0.71

Description：100V 15A 50W 80MR@10V,10A 2.5V@2
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b9239649f6a3 Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

Product Detailed Parameters

Description：100V 15A 50W 80MR@10V,10A 2.5V@2
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：110mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：632 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：55W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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15N10

Overview

The UMW 15N10 is an N-channel power MOSFET utilizing advanced trench technology to deliver low on-resistance and fast switching capabilities. It operates with gate voltages as low as 4.5V, making it suitable for a wide variety of applications. Key electrical characteristics include a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 15A at 25°C. The device features a typical RDS(ON) of 95mΩ at VGS=10V and 100mΩ at VGS=4.5V. It is housed in a TO-252 package.

Feature Summary

Advanced trench technology provides excellent RDS(ON) and low gate charge.
Operates effectively with gate voltages as low as 4.5V.
Features improved dv/dt capability and fast switching speed.
Low reverse transfer capacitance enhances performance.

Applications

Uninterruptible Power Supply (UPS)
Inverter System

Procurement Notes

Verify the specific manufacturer part number against official documentation to ensure authenticity. Confirm that the component matches the required TO-252 package and electrical specifications. Check for compliance with relevant environmental standards such as RoHS. Ensure the supplier provides valid traceability documents. Cross-reference datasheet parameters with actual requirements before finalizing procurement decisions.

Selection Notes

Select this component based on its 100V drain-source voltage and 15A continuous current rating. Consider the low RDS(ON) values at both 10V and 4.5V gate drive conditions for efficiency. Evaluate the thermal resistance and power dissipation limits for the intended operating environment. Ensure the application benefits from the fast switching speed and low gate charge characteristics.

Part Context

The 15N10 is an N-channel enhancement mode field effect transistor manufactured by UMW. It is designed for general-purpose power switching applications requiring high efficiency and reliability. The device is packaged in a TO-252 case, which facilitates surface mounting and heat dissipation. It belongs to the category of power MOSFETs used in various electronic circuits.

Replacement Considerations

When considering replacements, verify that alternative components match the 100V VDS, 15A ID, and TO-252 package. Ensure similar RDS(ON) and switching characteristics are maintained. Check for compatibility with existing gate drive voltages. Confirm thermal performance meets system requirements.